Abstract
An LNA for 8∼12 GHz is proposed in this paper. The amplifier uses a GaAs process with cost-effective, E-mode HEMTs with gate widths of 0.25 µm and 0.45 µm. The three stages of the LNA are powered by dual power supplies, with a drain operating voltage of +3V and a gate operating voltage of +0.7V. The simulation results of the schematic diagram show that the noise factor of the low-noise amplifier is less than 2.5dB in the frequency range of 8-12GHz, the in-band gain is greater than 30dB, the gain flatness is ±1.5dB, the 1dB compression point is 7dbm, the VSWRs are less than -10dB, and the LNA is absolutely stable in the X-band.
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