Abstract

An X-band high power multi-function chip has been designed and fabricated using 0.25 m SiGe BiCMOS technology, for a transmit/receive (T/R) module of phased array radar systems. The high power and wideband performance was achieved by the integrated power amplifiers employing an active bias circuit and a series feedback technique. The fabricated multi-function chip with a compact size of 8.4 mm 2 (3.5×2.4 mm) exhibits a transmit/receive gain of 30/20×dB and a P1dB of 18 dBm from 8 to 11 GHz.

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