Abstract
Baw resonator working at X band based on single crystalline LiNbO3 (LN) thin film is investigated by finite element simulation, and the influence of the electrode and LN thickness on the frequency and electromechanical coupling coefficient of the device is simulated. With an Al electrode and 300 nm thick LN, a resonator with a resonant frequency above 8 GHz is designed by the Mason model. The LN BAW is fabricated by ion-slicing technique and integrated with a SiO2/Ta2O5 Bragg reflector, and the microstructure of the LN thin film is characterized by transmission electron microscope and atomic force microscope. The fabricated LN BAW resonator is finally tested, and resonant frequency and the anti-resonant frequency are 8.04 GHz and 8.49 GHz, respectively, resulting in a large electromechanical coupling coefficient of 13.06%.
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