Abstract
This letter proposes an X-band power converter for high-speed bit-stream modulation. The converter consists of a power amplifier (PA) with pulsed load modulation, which performs highly efficient dc–ac conversion for a wide range of output powers, and a switching rectifier. Power conversion was performed in the X-band, and the potential for broad bandwidth and profile minimization was demonstrated. The PA was fabricated using a discrete gallium-nitride HEMT device and it delivered 39-dBm RF output power with 57.4% drain efficiency (DE) at 9.2 GHz under class-B conditions. At 6-dB output power back-off, 38.2% DE was measured for a 4 Gb/s data rate. The switching rectifier is designed using a class-B PA strategy to demonstrate the proposed concept. The ac–dc conversion efficiency was measured to be 44.6%, and 3.05-W dc power was delivered.
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