Abstract
ABSTRACTThis article describes a highly efficient X‐band CMOS power amplifier. To obtain high drain voltage for high power, instead of using the typical cascode structure, we use a common‐source structure with a long channel length transistor. Generally, to enable high operating speed at high frequency, smaller transistor technology is used, but we demonstrate that using large transistor technology is also possible. The proposed power amplifier is designed with transistors of 300‐nm channel length in a common‐source structure using a differential structure of RFCMOS technology. Consequently, the maximum output power is 19 dBm with a power added efficiency of 40.5% at an input power of 5 dBm. This RFCMOS power amplifier includes all matching circuits and biasing circuits, and no external components are required. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2552–2557, 2014
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