X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Abstract

A report is presented on the power performance of deep submicron AIGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10 GHz, 70% power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30 GHz, 31% PAE and 6.5 W/mm power density were achieved at a drain bias of 40 V.