Wurtzite InP formation during swift Xe-ion irradiation

Abstract

Ion beam-induced amorphization and crystallization in InP implanted at room temperature with swift (250 and 340 MeV) ${\mathrm{Xe}}^{+}$ ions to doses of $5\ifmmode\times\else\texttimes\fi{}{10}^{13}$ and $1\ifmmode\times\else\texttimes\fi{}{10}^{14}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}2},$ respectively, are investigated by transmission electron microscopy. For ion fluences above $5\ifmmode\times\else\texttimes\fi{}{10}^{13}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}2},$ amorphization is registered in the near-surface region as well as around the mean ion range. The amorphous layers produced due to electronic energy deposition in the near-surface region are found to have different short-range atomic structure as compared to those produced in the depth region of nuclear energy deposition. In the case of the highest ion fluence $(1\ifmmode\times\else\texttimes\fi{}{10}^{14}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}2})$ a partial crystallization of the amorphous surface layer to polycrystalline InP is observed. The process of the crystallization passes a stage of wurtzite InP phase formation.