Abstract
We report the growth of GaAs/AlGaAs core–shell nanowires (NWs) on GaAs(111)Bsubstrates by Au-assisted molecular beam epitaxy. Electron microscopy shows theformation of a wurtzite AlGaAs shell structure both in the radial and the axial directionsoutside a wurtzite GaAs core. With higher Al content, a lower axial and a higher radialgrowth rate of the AlGaAs shell were observed. Room temperature and low temperature(4.4 K) micro-photoluminescence measurements show a much higher radiativeefficiency from the GaAs core after the NW is overgrown with a radial AlGaAs shell.
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