Abstract
We have studied the growth of wurtzite GaN and Al x Ga 1− x N layers and bulk crystals by molecular beam epitaxy (MBE). MBE is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. However, we have used the MBE technique for bulk crystal growth and have produced 2 in diameter wurtzite Al x Ga 1− x N layers up to 10 μm in thickness. Undoped wurtzite Al x Ga 1− x N films were grown on GaAs (1 1 1)B substrates by a plasma-assisted molecular beam epitaxy (PA-MBE) method and were removed from the GaAs substrate after the growth. The fact that free-standing ternary Al x Ga 1− x N wafers can be grown is very significant for the potential future production of wurtzite Al x Ga 1− x N substrates optimized for AlGaN-based device structures.
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