Abstract
Present work reports the structural, morphological, compositional, photodetection, and temperature-dependent electrical characteristics of WTe2/FeS2 nanocomposite. In different temperature regions (170–318 K), different conductivity models have been fitted to determine charge transport mechanism. The temperature-dependent conductive behavior of thin film revealed that thermally activated transport mechanism is dominant at high temperatures. However, Mott's variable range hopping (VRH) transport mechanism shows dominance at lower temperatures. Furthermore, two different methods were used to illustrate the photoconductive nature of fabricated device. First method involves the determination of electrical characteristics under dark and light conditions at various temperatures. Later part comprises the photoelectrical properties of the fabricated device at different light wavelengths under room temperature conditions. Photoelectrical results showed fabricated device possess 1.628 A/W and 22.4 × 1013 Jones responsivity and detectivity under illumination with a light source (455 nm).
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