Abstract
W/Si multilayers with eight double layers (double layer spacing d=20 nm) were deposited on Si [100] substrates using hot-filament (or hot-wire) metal organic chemical vapor deposition (MOCVD). The process was performed in a stainless steel reactor with a tungsten filament at a temperature of 1000°C and a substrate temperature of 190°C. The film thickness and growth was controlled by an in situ soft X-ray reflectivity measurement. The multilayers were characterized by cross-section transmission electron microscopy (XTEM) and sputter auger electron spectroscopy (AES). The results are compared to W/Si bilayers, which were deposited without a hot-filament at higher substrate temperatures (500–670°C).
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