Abstract
Nonvolatile write-once-read-many-times (WORM) Pt/Al2O3/ITO memory devices prepared at room temperature were demonstrated. The WORM memory devices show irreversible transition from the initial low resistance (ON) state to the high resistance (OFF) state, high ON/OFF ratio, long data retention, and good reading endurance in air at room temperature. The high performances are promising for employing the Pt/Al2O3/ITO WORM memory devices in permanent storage of information. The nonvolatile memory behaviors could be attributed to the formation and permanent rupture of conductive filament consisting of positively charged oxygen vacancies.
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