Abstract
Write error rate (WER) in voltage-induced magnetization switching of a conically magnetized free layer with an elliptic cylinder shape is numerically calculated on the basis of the macrospin model. Simulations using the Langevin equation show that a WER lower than the order of ${10}^{\ensuremath{-}5}$, which enables practical WER with a single error-correction process, is theoretically feasible at zero-bias magnetic field and room temperature. We also show that WER at a given thermal stability factor and the volume of the free layer can be reduced by adopting the free layer with the larger in-plane shape anisotropy field and a moderate cone angle at zero-bias voltage.
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