Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

Abstract

We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.