Abstract
Through experimental results and analysis by TSUPREM4/MEDICI simulations, the worst case back gate total dose bias condition is established for body tied SOI NMOSFETs. Utilizing the worst-case bias condition, a recently proposed model that describes the back n-channel threshold voltage shift as a function of total dose, TSUPREM4/MEDICI simulations, and circuit level SPICE simulations, a methodology to model post-rad standby current is developed and presented. This methodology requires the extraction of fundamental starting material/material preparation constants, and then can be utilized to examine post-rad stand-by current at the device and circuit level as function of total dose. Good agreement between experimental results and simulations is demonstrated.
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