Abstract

In the present study, silver nanocomposite resistive switching devices were fabricated by inkjet printing, specifically designed inks onto planar symmetrical electrodes. The printed devices show different memory/switching behaviours according to the printed pattern and number of ejected drops (in turn according to the total ejected ink volume). A drop-on-position print results in a random access type memory with a rectifying ratio of 103. The effect of compliance upon switching was studied. It was observed that an increase in the compliance current changed the switching behaviour of the device to bipolar and non-volatile with an On/Off ratio of 104. A print-on-the-fly method resulted in a write-once-read-many device instead, where once a low resistance state was reached, the device was unable to recover its initial high resistance state. The present study gives an insight into the field-induced formation of conductive silver filaments, resulting in resistance switching. The active switching matrix ink formulation enabled easy deposition onto various substrates, thus widening printed electronics potential.

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