Abstract
An interesting approach is proposed for investigating the thermal stress of AlGaAs/GaAs laser diode bars using infrared thermography. We obtained horizontal and perpendicular profiles of the working thermal stress through the active region in one emitter (emitter 5) at operating currents 0.5 and 1.0 A. The thermal stress at the center of emitter 5 is found to quickly rise to values 2.1 and 3.4 MPa under the operating currents 0.5 and 1.0 A. The thermal stress gradient in the epitaxial layer is also larger than that in the substrate. In addition, if emitter 5 operates individually, a thermal stress spike at a current of about 0.2 A appears, with a sharper rise in slope between 0.1 and 0.2 A than between 0.2 and 1.0 A. Furthermore, with regard to the properties of transient working thermal stress, the profile of the thermal crosstalk between emitters was obtained at different operating currents.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Device and Materials Reliability
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
