Abstract
Workfunction tuning by the implantation of various impurities and by changing silicidation conditions was investigated for a fully silicided NiSi gate. In the case of Sb implantation, it was found that the NiSi gate workfunction was decreased by 0.34 eV from 4.60 eV, for an undoped NiSi gate, to 4.26 eV due to the lowering of the silicidation temperature. Ge, which has not been used for workfunction tuning before, induced a decrease in NiSi gate workfunction in the same way. In the case of In implantation, a decrease in accumulation capacitance in capacitance–voltage (C–V) characteristics was observed. The origin of this problem was found to be void formation at the oxide interface. The voids were also found in NiSi predoped with Sb and silicided at 450°C or lower.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
