Abstract
Co-sputtered nickel silicide films were evaluated on thin layers of SiO2 gate dielectrics. Work function values ranging from 4.86eV for Ni rich films to 4.3eV were observed at 400°C and were found to be a strong function of the Ni and Si ratio in the films. Phase analysis indicated the presence of different phases of NixSiy for varying concentrations of Ni and Si. High-temperature characteristics, leakage, and change in equivalent oxide thickness values were also evaluated for selected conditions. Rutherford backscattering, x-ray diffraction, Auger electron spectroscopy and high-resolution transmission electron microscopy were used for material analyses.
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