Abstract
The electronic band structure and the work function of MgO thin films epitaxially grown on Ag(001) have been investigated using x-ray and ultraviolet photoelectron spectroscopy for various oxide thicknesses. The deposition of thin MgO films on Ag(001) induces a strong diminution in the metal work function. The p-type Schottky barrier height is constant at 3.85±0.10 eV above two MgO monolayers and the experimental value of the ionization potential is 7.15±0.15 eV. Our results are well consistent with the description of the Schottky barrier height in terms of the Schottky–Mott model corrected by an MgO-induced polarization effect.
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