Abstract
The effective work function of the (110) face of a crystal of tantalum in the presence of cesium was estimated from values of the saturated electron emission deduced from the characteristics of a diode. The temperature of the cesium reservoir ranged from 320° to 380°K and the emitter temperatures were in the range 1100° to 1350°K. Under these conditions the work function of the cesium-covered surface was about 0.3 eV lower than that of polycrystalline material under similar conditions.
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