Abstract
Three MOS gate structures; polysilicon, tungsten silicide and tungsten polycide, were fabricated and their workfunctions measured with the high frequency C-V technique. The work functions were 4.14 ev and 4.82 ev for phosphorus doped polysilicon and silicon-rich tungsten silicide, respectively. The tungsten polycide structure, however, showed a variance between 4.14 ev and 4.38 ev for different experiments. The polycide MOS device threshold was about 0.15 volt higher than that of polysilicon. Phosphorus out-diffusion and tungsten diffusion along polysilicon grain boundaries were postulated to explain this phenomenon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
