Abstract
Effects of a Se treatment on the work function of epitaxially grown GaAs surfaces were measured by photoemission spectroscopy. Although the Se treatments reduced the band bending of n-type GaAs, the work function increased. This result indicates that the surface component of the work function increased and that the surface dipole moment, whose direction was from the surface to the bulk (outer layer: -, inner layer: +), was formed at the Se-treated GaAs surface. On the other hand, qualitative analysis based on the electron counting model revealed that the direction of the surface dipole in the previously proposed structural model of Se/GaAs(001) was completely opposite to that obtained in our experimental results. It is suggested that this discrepancy is due to the vacancies in the internal Ga layer in the structural model.
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