Abstract
Effects of a Se treatment on the work function of epitaxially grown GaAs surfaces were measured by photoemission spectroscopy. Although the Se treatments reduced the band bending of n-type GaAs, the work function increased. This result indicates that the surface component of the work function increased and that the surface dipole moment, whose direction was from the surface to the bulk (outer layer: -, inner layer: +), was formed at the Se-treated GaAs surface. On the other hand, qualitative analysis based on the electron counting model revealed that the direction of the surface dipole in the previously proposed structural model of Se/GaAs(001) was completely opposite to that obtained in our experimental results. It is suggested that this discrepancy is due to the vacancies in the internal Ga layer in the structural model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Japanese Journal of Applied Physics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
