Abstract
Lateral polarity heterostructure (LPH) was grown with adjacent Ga- and N-face domains in order to invert the polarity of the crystal within a periodicity of a few microns. In this study we focus on the analysis of these LPH by Auger electron spectroscopy (AES). Because of the relationship between the Auger electron energy and the Fermi level, AES is a suitable method to identify the domains of a lateral polarity heterostructure. In addition, we discuss the possibility of determining the work function difference of Ga- and N-face GaN. This difference in the work function between Ga-face and N-face GaN is found to be 0.25eV. This difference is caused by a surface band bending.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.