Abstract
Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with crosssectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as 1 x 10-4 Torr. This method provides a possible alternative means for fabricating ultrafine silicon quantum wires. © 1998 The Electrochemical Society. S1099-0062(98)03-088-7. All rights reserved.
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