Abstract
A windowless helium lamp is employed to assist chemical vapor deposition of hydrogenated amorphous silicon from disilane feedstock gas at a film growth rate greater than 200 Å/min. Material properties in this preliminary study are comparable to the best hydrogenated amorphous silicon (a-Si:H) films produced by conventional bulk plasma CVD techniques. The amount of photoconductivity degradation under long-time illumination is more than plasma-deposited a-Si-H thin films. Photoconductivity as high as σp =4×10−4 (Ω cm)−1 has been obtained.
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