Window function for fractional‐order HP non‐linear memristor model

Abstract

In order to overcome the boundary effect and boundary lock problem existing in classical Hewlett-Packard (HP) TiO 2 non-linear model, the authors propose a novel window function for the fractional-order HP TiO 2 non-linear drift model, in which the fractional calculus is utilised to reflect the memory property of the memristor device. The novel window function is general and they can take the previously reported well-known window functions as its special cases by turning parameter a . Compared with the integer-order model, the order α and a in the fractional-order case is important parameters to flexibly realise the non-linear dopant drift of memristor model even when a wider amplitude range of the input voltage is applied. Simulation results illustrate that their model is flexible, scalable to guarantee the state variable x(t) and the memristor valueM α (x) switched between the low and high levels by choosing suitable parameter α and a . A simple practical application also confirms the efficiency of their model to reveal the non-linear dopant kinetics of the memristor device.