Abstract
Abstract : This was a study of hot-electron transport, noise, and energy relaxation for doped zinc-oxide and structured ZnO transistor materials with a 2-D electron gas (2DEG) channel subjected to a strong electric field. We conclude that the ZnO 3DEG and 2DEG channels can be operated at the electron density window with better performance than at the off-window electron densities. Models based on the Boltzmann kinetic equation for hot electrons fail to interpret the experimental results unless hot-phonon accumulation is taken into account; assumption of electron density-independent hot-phonon lifetimes explains the transition of the hot electron-hot phonon system from weak to intense coupling but fails to predict window position.
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