Abstract
A concise review of the history and of the basic physics of the Wigner crystal (electron solid) in two-dimensional electron systems in semiconductor heterostructures is given. The results of our experimental study on the formation and of the properties of the magnetic field-induced insulating phase, supposed to be a Wigner crystal, in a two-dimensional electron gas in In 0.53 Ga 0.47 As/InP heterostructures are surveyed. These structures are characterized by a much greater disorder potential than AlGaAs/GaAs heterostructures due to the inherent alloy disorder in the InGaAs layer supporting the two-dimensional electron gas. In high magnetic fields, below a Landau level filling factor of 0.4-0.5 divergent resistivity, nonlinear current-voltage characteristics with a threshold, and a transition from non-activated to activated transport were observed. A model is proposed for the Wigner crystal-like ordering of the two-dimensional electron gas in this system with large disorder.
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