Abstract
Widely tunable semiconductor lasers are useful in DWDM applications such as wavelength conversion, optical network routing and multi-wavelength sparing. Tunable external cavity diode lasers (ECL) with wide continuous tuning ranges, high output power, narrow linewidth, and excellent wavelength accuracy and side mode suppression have been widely used in test equipment, but the size and cost of the large optomechanical assemblies have generally precluded their use in telecommunications. We describe a high power, widely tunable micro-external cavity InGaAs/InP diode laser with a MEMS electrostatic actuator that matches the performance of conventional ECLs, in a low cost, 5 mm/spl times/5 mm form factor.
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