Abstract
This paper presents the analysis and design of wideband tri-stage Doherty Power Amplifier (DPA). The DPA is implemented using three 10-W packaged GaN-HEMT devices from CREE. The measured drain efficiency is more than 50% and 45% over the frequency range of 700MHz to 1000MHz at 6dB and 9.54dB output power back off (OPBO) respectively. The peak drain efficiency is better than 60% over this 300 MHz band. Measurements with 10MHz LTE signal with PAPR of 11.89dB shows the average drain efficiency of 45.7% at average power of 32.04 dBm at 850MHz. The corresponding adjacent channel power ratio is better than −46.27dBc after using digital predistortion algorithm.
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