Wideband SiGe down-converter for millimeter-wave radio astronomy applications

Abstract

A Q-band down-converter module with high conversion gain (CG) is presented for a wideband radio astronomy receiver. This down-converter module is designed on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) process (0.13 μm) to realize high CG, low LO power operation, and wideband frequency impedance matching for RF/LO/IF ports. The down-converter consists of a double-balanced Gilbert mixing core with on-chip RF/LO transformer baluns, an IF buffer, and bandpass filter. The performance of the down converter is largely dependent on the passive components and signal line interconnection. The design of all passive structures is analyzed and optimized with FEM simulations for a high-quality factor to minimize losses and parasitic effects. This module achieves 8 dB of CG at a low LO power of −6 dBm over a wide RF bandwidth from 28 to 56 GHz and IF bandwidth from 6 to 18 GHz. It demonstrates LO-to-IF/LO-to-RF/RF-to-IF isolations > dB / 40 dB/35 dB, respectively. The critical FEM simulation is described in the design of this high-density SiGe HBT RF circuit. The measured performance confirms the simulation results. The module meets the original design requirements of the DVA-2 Q-band receiver.