Abstract
AbstractWe have fabricated stacked InAs quantum dots (QDs)/GaAs LED for a wideband near‐infrared light source. The 15‐stacked InAs QDs/GaAs structure and the indium tin oxide (ITO) electrode were used for the LED. Good current‐voltage characteristics were achieved. The built‐in voltage was 1.0 V. Gaussian‐shape luminescence with a central wavelength of 1144 nm and a full width at half maximum (FWHM) of 99 nm was observed. We achieved a maximum output power of 2.9 mW. These LED properties should be suitable for practical applications. The transmission image of a finger was taken by using the 15‐stacked InAs QDs/GaAs LED and the InGaAs camera without special optical settings or the image processing. As a result, the blood vessel under the skin was observed. These results indicate that the 15‐stacked InAs QDs/GaAs LED can be equipped with practical measuring instruments (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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