Wideband Modeling of DC-DC Buck Converter with GaN Transistors

Piotr Musznicki,Pawel B Derkacz,Piotr J Chrzan

doi:10.3390/en14154430

Abstract

The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model of the converter is reduced to obtain one lumped inductance of the input filter PCB for the analytical prediction of transistor turn-off ringing frequency and overvoltage. The practical use of the model is presented for sizing optimal capacitance of snubber.

Highlights

Today’s power electronics converters are increasingly more often build using the WideBandgap (WBG) semiconductor switches
These allow operating with higher switching frequency and shorter turn on and turn off times. It is a reason for increasing the electromagnetic interference (EMI), oscillations, and overvoltages
The simplified model of transistor gate driver described in details in [11]

Summary

Introduction

Today’s power electronics converters are increasingly more often build using the Wide. These allow operating with higher switching frequency and shorter turn on and turn off times. It is a reason for increasing the electromagnetic interference (EMI), oscillations, and overvoltages. For the designing process of the power converter, it is preferred to forecast the high-frequency phenomena with satisfying accuracy, in the early stage of design. Carbide (SiC) or Gallium Nitride (GaN) require improving the simulation methods with high precision of model parameters and accurate results. Many authors present the wideband modeling methods for predicting EMI [1,2,3,4]

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Conclusion