Abstract
A 3-16 GHz wideband AlGaN/GaN high electron mobility transistor (HEMT) low noise amplifier (LNA) on silicon carbide substrate, using balanced configuration with a coplanar waveguide Lange coupler, is designed and fabricated. This LNA shows a minimum noise figure of 4 dB with associated gain of 20 dB with gain flatness of /spl plusmn/3 dB across the 3-16 GHz frequency range. The output third order intercept point of 38 dBm is achieved at 8 GHz.
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