Wideband and scalable equivalent-circuit model for differential through silicon vias with measurement verification

Abstract

The three-dimensional integrated circuit has attracted much attention because of evolving functions in today's integrated circuit products and continuing demands for low power consumption and miniature chip size. Through silicon vias (TSVs) provide a vertical interconnection between stacked dies with much shorter and denser connectivity than the hybrid horizontal and bondwire interconnects in conventional use. Moreover, a differential interconnect is more commonly used in high-speed digital circuits for its higher immunity to common-mode noise than a single-ended one. Therefore, a scalable physical model for differential TSVs has been proposed in this work. Consequently, the mixed-mode S-parameters were generated from the established model to compare electrical performance between a GSSG- and GSGSG-type differential TSV. Additionally, with the help of a double-sided probing system, four-port S-parameters were measured up to 40 GHz to validate the modeled results.