Abstract

An 80 W balanced GaN-HEMT power amplifier for 2.45–2.70 GHz using branch-line couplers is presented in this paper. Its performance is compared to a single-transistor solution. The analysis shows that a balanced amplifier is favorable because it simplifies measures to ensure electrical stability and allows better heat sinking.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.