Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics

Abstract

SummaryThis paper investigates modeling of silicon‐germanium heterojunction bipolar transistor noise parameters and impedance‐matched Low‐Noise Amplifiers (LNAs) intended for operation across a wide temperature range (from 93 to 393 K). In general, noise performance improves with cooling until about 150 K, then degrades some because of carrier freeze‐out. With a temperature independent bias current, an LNA designed for 300 K operation shows acceptable performance from 93 to 393 K, albeit with some degradation of linearity below 120 K. Copyright © 2015 John Wiley & Sons, Ltd.