Abstract
A wide-spectrum InGaN tunnel-junction (TJ) light-emitting diode (LED) stacked by two unit LEDs with high homogeneity is investigated numerically. Effort is made to balance the emission intensity from the multiple-quantum well active regions of individual unit LEDs by optimizing the materials of quantum wells (QWs) and quantum barriers (QBs) as well as the thickness of QBs. Upon optimization, the proposed TJ-LED structure is of high radiative recombination efficiency and uniformly distributed carriers in QWs. The physical mechanisms relevant to the desirable output performance are explored. The results of this study may be of great help for the application of cascaded LEDs or micro-LEDs with minimal number of unit LEDs.
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