Abstract
The design of a uniformly spaced 1 × 4 linear antenna array using epitaxial layers of benzocyclobutene over an InP substrate is demonstrated. The array elements are conjugately matched with a uni-travelling carrier photodiode at the input. The phased array is optimised to counteract mutual coupling effects by introducing metal strips with isolated ground planes for each radiating element. The proposed antenna array can provide a gain of 10 dBi with a gain variation of ±3 dB. The array operates over a bandwidth of 10 GHz (295–305 GHz) with a wide scanning angle of 100° in the broadside.
Highlights
A linear 1 × 4 array is realised on indium phosphide (InP), which is interfaced with a high-speed unitravelling carrier photodiode
The array fabrication does not need via holes within InP, and overcomes the fabrication challenges of InP
A modified ground plane is proposed for InP-based sub-THz antenna arrays
Summary
Millimetre-wave (mm-wave) communications provide an enormous potential for revolutionising mobile communications in terms of data rates and bandwidth. InP has an isotropic etching profile, making it challenging to realise waveguiding structures involving via through holes These design bottlenecks can be overcome by resorting to an alternative technique of depositing a thin film of a material having a lower relative dielectric constant over a ground plane that provides shielding to the InP substrate [18]. This superficial layer can be used to realise planar arrays by capacitively feeding the radiating elements. The input impedance of radiating elements is optimised to provide a conjugate match to in-housebuilt uni-travelling carrier photodiodes operating at around 300 GHz for maximum power transfer. Using integrated true time delay phase shifters, the beam direction can be steered in broadside for ±50◦
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