Wide optical band gap window layers for solar cells

Abstract

In this paper, the preparation of amorphous silicon carbide with very wide optical band gap and high conductivity were reported. The films were fabricated under the “silane–plasma starving” and H 2 dilution condition in conventional capacitively coupled reactors. The silane–plasma starving condition and H 2 dilution play important roles in decreasing H content, modulating the material toward the ordered structure and enhancing the doping ratio. This is an easy way to prepare wide optical band gap and highly conductive p-type window layers for a-Si : H-based solar cells.