Abstract
An SiO/sub 2//36 degrees Y-X LiTaO/sub 3/ substrate which has an excellent temperature characteristic and a high electromechanical coupling coefficient has been prepared. The temperature coefficient of frequency (TCF) is zero, and the electromechanical coupling coefficient is 5.2% when the thickness of SiO/sub 2/(H/ lambda ) is 21%. An energy-trapped structure which is a one-port-type resonator connects a loading capacitance in series to a transducer. Using this resonator, a voltage-controlled oscillator (VCO) with an excellent temperature characteristic and a wide frequency deviation larger than 800 ppm/V is obtained. >
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