Abstract
In this work, we demonstrate wide RF and IF bandwidth resistive fundamental terahertz mixers based on graphene field-effect transistors. In the RF frequency range of 220-487 GHz, the 3-dB IF bandwidth is 32 GHz and 56 GHz for the mixers based on graphene field-effect transistors with the gate length of 1.2 μm and 0.6 μm, respectively. The highest conversion efficiency is estimated to be -28 dB at local oscillator power of 13 dBm. This shows that resistive fundamental terahertz mixers based on graphene field-effect transistors are promising for ultrawide band-width applications.
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