Abstract
In order to build a gigabit/second pulse amplifier for medium power applications a new transistor-distributed amplifier configuration was developed and tested. A five-section amplifier employing 5 GHz f/SUB T/ bipolar transistors has a frequency response from DC to 3.6 GHz. Results achieved were a 10 dB gain, 130 ps step response rise time, and a amplitude of 4 V peak to peak across a 50 /spl Omega/ load.
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