Abstract
Composite structures based on metal open rings and thin wires are well established, for obtaining efficient negative index materials (NIM), acting as metamaterials in the long wavelength regime. The main losses are due both to metal absorption and to the inner electric resistance of metals; to overcome this latter loss we propose a new metal-semiconductor structure dimensioned by direct synthesis method, which offers an almost perfect Drude-like effective magnetic permeability. The choice of particular semiconductor components allows to get a negative resistance for the current induced by the electromagnetic field, which cancels that of the metal but puts a limit to the spectral response of the metamaterial. We consider some parasite effects, such as bianisotropy and incorrect values of structural parameters, to see limitations and features of this new NIM technology.
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