Abstract

A GaAs monolithic single-side-band up-converter designed for use in communication systems is presented. The device uses two high performance four-quadrant-multipliers made with MESFET's using the Gilbert cell structure, that are operated in a 90° configuration to generate a single-sideband output. More than one-decade (0.5-5 GHz) RF bandwidth is achieved. IF bandwidth is DC500 MHz and power consumption is 300 mW. Real measurements demonstrate more than 40 dB suppression of all spurious signals, over the whole RF and IF bandwidth. The chip includes 16 MESFETs and 32 passive elements in a 1.5 × 2.4 mm2 area.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call