Abstract
In the course of studying silicon modifications to improve emission properties of commonly used organic compounds, biphenyl with dimethylsilylvinyl groups in the para position (3-Si) was investigated. A comparative study was performed on the exact C-analogue (3-C) and expanded to biphenyl and dimethylbiphenyl to emphasize the general trend observed. Compound 3-Si displayed emission properties clearly different than all of the investigated hydrocarbon compounds, i.e. twice stronger fluorescence (Φf = 0.6) and a 3-times larger radiative rate constant as compared to 3-C in acetonitrile. Searching for the source of the unique emission of 3-Si, singlet and triplet processes were investigated for all of the compounds using steady-state and time-resolved methods, and their principal photophysical parameters are reported. Experimental work was supported by the theoretical predictions obtained using the EOM-CCSD method. The results led to the conclusion that the strong emission of 3-Si must be due to silicon's presence that enhanced intensity borrowing from the strongly allowed S0 → S2 transition and the larger S1 → S0 transition moment.
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