Abstract
P-type GaAs/AlGaAs quantum well infrared photodetectors (QWIP) represent a complementary technology to the well developed and already commercialized n-type GaAs/AlGaAs QWIP technology. Since n-QWIPs require grating couplings for normal incidence absorption, p-type GaAs/AlGaAs QWIPs have emerged as a viable alternative in some applications. In this paper, progress in optimizing the performance of p-type GaAs/AlGaAs QWIPs through modeling, growth, and characterization is described. Our approach begins with the theoretical design of p-QWIPs based on calculations of optical absorption. Next, samples are grown by MBE according to the theoretical designs and their characteristics measured. p-type QWIPs were optimized with respect to the well and barrier widths, alloy concentration, and dopant concentration; resonant cavity devices were also fabricated and the temperature dependent photoresponse was measured. Based on the progress to date, it is now possible to make some comparisons between the n- and p-type approaches. Further avenues for improvement of p-QWIP photoresponse are being explored by exploiting the rich physics of this coupled multi-band system.
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