Abstract
GaN-based μLEDs with superior properties have enabled outstanding achievements in emerging micro-display, high-quality illumination, and communication applications, especially white-light visible light communication (WL-VLC). WL-VLC systems can simultaneously provide white-light solid-state lighting (SSL) while realizing high-speed wireless optical communication. However, the bandwidth of conventional white-light LEDs is limited by the long-lifetime yellow yttrium aluminum garnet (YAG) phosphor, which restricts the available communication performance. In this paper, white-light GaN-μLEDs combining blue InGaN-μLEDs with green/red perovskite quantum dots (PQDs) are proposed and experimentally demonstrated. Green PQDs (G-PQDs) and red PQDs (R-PQDs) with narrow emission spectrum and short fluorescence lifetime as color converters instead of the conventional slow-response YAG phosphor are mixed with high-bandwidth blue InGaN-μLEDs to generate white light. The communication and illumination performances of the WL-VLC system based on the white-light GaN-based μLEDs are systematically investigated. The VLC properties of monochromatic light (green/red) from G-PQDs or R-PQDs are studied in order to optimize the performance of the white light. The modulation bandwidths of blue InGaN-μLEDs, G-PQDs, and R-PQDs are up to 162 MHz, 64 MHz, and 90 MHz respectively. Furthermore, the white-light bandwidth of 57.5 MHz and the Commission Internationale de L’Eclairage (CIE) of (0.3327, 0.3114) for the WL-VLC system are achieved successfully. These results demonstrate the great potential and the direction of the white-light GaN-μLEDs with PQDs as color converters to be applied for VLC and SSL simultaneously. Meanwhile, these results contribute to the implementation of full-color micro-displays based on μLEDs with high-quality PQDs as color-conversion materials.
Highlights
Group III-nitride semiconductors are among the most popular wide-bandgap semiconductors owing to their superior advantages of high electron mobility, wide bandgap, high stability, and high breakdown voltage [1,2,3]
light-emitting diodes (LEDs) have become some of the most mature and influential optoelectronic devices since they were first demonstrated in the 1990s [9]
They have been widely used in solid-state lighting (SSL), outdoor and indoor displays, and backlight sources owing to their high efficiency and endurance, high cost efficiency, low power consumption, etc. [10,11,12]
Summary
Group III-nitride semiconductors are among the most popular wide-bandgap semiconductors owing to their superior advantages of high electron mobility, wide bandgap, high stability, and high breakdown voltage [1,2,3]. LEDs have become some of the most mature and influential optoelectronic devices since they were first demonstrated in the 1990s [9] They have been widely used in solid-state lighting (SSL), outdoor and indoor displays, and backlight sources owing to their high efficiency and endurance, high cost efficiency, low power consumption, etc. In contrast with broad-area LEDs, GaN-based μLEDs possess excellent electronic and optical properties including lower resistance-capacitance (RC) delay, high bandwidth, high efficiency, high brightness, and high contrast. Thanks to these outstanding characteristics, GaN-based μLEDs have seen development beyond SSL, and are used in cutting-edge applications such as micro-displays, augmented reality and virtual reality, optogenetics, and visible light communications (VLC) [13,14,15]. In 2010, the GaN-based μLED was first employed in VLC by Martin D
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
