Abstract
An efficient white-light emitting diode ITO/NPB/Zn(4-TfmBTZ) 2/Alq 3/LiF/Al was obtained when a new material bis(2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate)zinc [Zn(4-TfmBTZ) 2] was used as an electron-acceptor emitting layer, NPB as an electron-donor emitting and hole-transporting layer, and Alq 3 as an emitting and electron-transporting layer. In this device, the exciton emissions of NPB, Zn(4-TfmBTZ) 2 and Alq 3 in addition to the electroplex emissions of Zn(4-TfmBTZ) 2/NPB interface render white light output. Inserting an Alq 3 layer with appropriate thickness can increase EL efficiency and improve chromaticity. The most pure white light emission with CIE coordinates of (0.30, 0.34) and CRI of 90.2 can be attained by adjusting Alq 3 layer thickness to 20 nm. Moreover, CIE coordinates are very insensitive to the applied voltage. The CIE coordinate region is (0.29–0.30, 0.33–0.34) at various forward bias (8–13 V). This device showed the maximum luminance of 2445 cd/m 2 at 14 V and the maximum current efficiency of 1.39 cd/A, which will be improved further by optimizing the preparation technique of device.
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